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Proceedings Paper

A Linear Monolithic MIR Imager With PbTe Photoconductive Sensors
Author(s): J Vermeiren; C Claeys; G Marangoni; M D'Antoni; C Musilli; M Fabbricotti
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Paper Abstract

A monolithic Midwave InfraRed (MIR) sensitive array based on PbTe photoconductive sensors and a silicon CCD current integrator and multiplexer is manufactured and evaluated.. The dark current of the devices can be kept sufficiently low to allow for integration times of 4.4 msec. The responsivity and the detectivity D* of the device are quite high and can be compared to other types of IR sensors for the same wavelength range. The responsivity uniformity of the PbTeCCD is better than 10 %.

Paper Details

Date Published: 18 July 1988
PDF: 7 pages
Proc. SPIE 0929, Infrared Optical Materials IV, (18 July 1988); doi: 10.1117/12.945845
Show Author Affiliations
J Vermeiren, IMEC (United States)
C Claeys, IMEC (United States)
G Marangoni, Elettronica (Italy)
M D'Antoni, Elettronica (Italy)
C Musilli, Elettronica (Italy)
M Fabbricotti, ESTEC (The Netherlands)


Published in SPIE Proceedings Vol. 0929:
Infrared Optical Materials IV
Solomon Musikant, Editor(s)

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