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Proceedings Paper

Reproducibility And Yield Study Of Electron-Beam-Generated Quarter-Micron And Sub-Quarter-Micron Gate-Length GaAs Fets
Author(s): I V Zubeck; Z C. H. Tan
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Paper Abstract

In this work, we studied reproducibility and yield in the fabrication of quarter-micron and sub-quarter-micron gates for GaAs FETs. To achieve reproducible gate length and high gate yield, an optimized lift-off process was used in conjunction with variation in the e-beam writing strategy. Statistical analysis of several wafers was made for each gate length at a given processing and exposure condition. It was observed that the gate length obtained was dependent on the exposing electron beam diameter, which in turn is a functi©n of filament (LaB6) age. Reproducibility of gate length is independent of accelerating voltage. Both reproducibility and yield are improved by use of smaller field size. At 1.6-mm field, two adjacent pass exposures provided better reproducibility for quarter-micron gates than did single-pass exposure. The associated yield was higher than 95%.

Paper Details

Date Published: 14 June 1988
PDF: 5 pages
Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945658
Show Author Affiliations
I V Zubeck, Varian Research Center. (United States)
Z C. H. Tan, Varian Research Center (United States)


Published in SPIE Proceedings Vol. 0923:
Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII
Arnold W. Yanof, Editor(s)

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