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Proceedings Paper

High Speed Data Control Circuit For Nanometric Electron Beam Lithography
Author(s): Mitsuo Ohyama; Masahide Okumura; Norio Saitou
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Paper Abstract

A nanometric electron beam lithography system was developed with 0.1 um resolution using 0.03 μm electron beam. To get practical writing speed of 1 wafer/ hr with 0.1 μm resolution, many new technologies were developed in the system. Here, the high speed data control circuit is precisely described. It consists of a pattern generator (a buffer memory, a framing processor, decomposition processor and correction processor ) and a beam deflection controller.

Paper Details

Date Published: 14 June 1988
PDF: 7 pages
Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945657
Show Author Affiliations
Mitsuo Ohyama, Hitachi Ltd (Japan)
Masahide Okumura, Hitachi Ltd (Japan)
Norio Saitou, Hitachi Ltd (Japan)


Published in SPIE Proceedings Vol. 0923:
Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII
Arnold W. Yanof, Editor(s)

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