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Proceedings Paper

Electron-beam direct write on gate arrays
Author(s): J A.C Stenton; J G.S Williams; R J.D MacAulay
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Paper Abstract

An e-beam system is described which has been used to perform the final, customisation lithography on gate array chips supplied by several manufacturers. As not all of the types of gate array involved possess registration marks intended for e-beam use, an advanced registration technique employing cross-correlation has been developed to make use of such structures as are available. Electron-optical distortions have been simply corrected by using gate array chips themselves as calibration targets. The registration system is capable of acceptable performance at very low signal-to-noise ratios, and is therefore well suited to situations where the registration marks are deeply buried, e.g. in gate arrays with multiple metal levels.

Paper Details

Date Published: 14 June 1988
PDF: 6 pages
Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945655
Show Author Affiliations
J A.C Stenton, Qudos Ltd (United Kingdom)
J G.S Williams, Qudos Ltd (United Kingdom)
R J.D MacAulay, Qudos Ltd (United Kingdom)


Published in SPIE Proceedings Vol. 0923:
Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII
Arnold W. Yanof, Editor(s)

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