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Proceedings Paper

Application Of Vector Scan E-Beam Lithography In Fabrication Of Gaas Devices
Author(s): John B Bickley; Bernard A Wallman
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Paper Abstract

The growing interest in the use of Gallium Arsenide semiconductor materials has presented many opportunities for device operational speed improvements but has also presented many problems for the device maker. In particular a whole new range of processing techniques have been needed which are significantly different to those used routinely in Silicon processing. In addition, to obtain the best operational characteristics, device feature dimensions, linewidth tolerance and overlay accuracies are significantly more demanding than current silicon practices require. This "lithographic challenge" is at its most extreme where microwave active components like MESFET transistors are required. Present day routine devices require 0.5 to 0.25 micron gate lengths whilst leading edge devices need 0.1 micron or below complicated by the need for fabrication in three dimensions for "T" section structures. These are necessary to provide adequate gate conductivity and power handling whilst maintaining the narrow gate length contact.

Paper Details

Date Published: 14 June 1988
PDF: 11 pages
Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945651
Show Author Affiliations
John B Bickley, Cambridge Instruments Ltd (United Kingdom)
Bernard A Wallman, Cambridge Instruments Ltd (United Kingdom)

Published in SPIE Proceedings Vol. 0923:
Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII
Arnold W. Yanof, Editor(s)

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