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Proceedings Paper

Nanolithography With Poly(3-Butenyltrimethylsilane Sulfone)
Author(s): Antoni S Gozdz; Paul S.D Lin
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Paper Abstract

A two-layer resist process for the rapid direct-write e-beam microfabrication of nanometer-size structures is reported. The resist structure had a top layer of a sensitive positive organosilicon e-beam resist, poly(3-butenyltrimethylsilane sulfone) (PBTMSS), and a bottom layer having high chemical, thermal and mechanical stability, e.g., hard-baked Novolac, polyimide or diamond-like carbon (DLC). Periodic patterns with a pitch of >-60 nm have been obtained. Double-channel planar-buried-heterostructure distributed-feedback 1.3-μm lasers incorporating 2025-nm-pitch λ/4-shifted gratings fabricated using the reported process had excellent spectral and power characteristics.

Paper Details

Date Published: 14 June 1988
PDF: 8 pages
Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945646
Show Author Affiliations
Antoni S Gozdz, Bell Communications Research (United States)
Paul S.D Lin, Bell Communications Research (United States)


Published in SPIE Proceedings Vol. 0923:
Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII
Arnold W. Yanof, Editor(s)

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