Share Email Print

Proceedings Paper

High Resolution, Novolak Based Negative Tone Electron Beam Resist
Author(s): Mark deGrandpre; Karen Graziano; Stephen D Thompson; Hua-yu Liu; Lauren Blum
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A novel, aqueous alkaline developable, sensitive electron beam resist is described. This resist is a three component system consisting of a novolak resin, aminoplast, and a radiation sensitive acid generator (RSAG). The resist has demonstrated high resolution (0.3 μm grating in 0.5 μm thick resist) with under 5uC/cm2 exposure dose. Furthermore, the resulting resist images exhibit dry etch stability comparable to optical positive novolak resists. This paper describes the chemistry of this novel resist system. The mechanism of the crosslinking reaction is discussed using data from GPC, FT IR and GCMS as analytical probes. The variation of sensitivity and contrast with resist composition has been analyzed as well. The paper addresses the nature of the post exposure "dark reaction" in this resist and compares it to other electron beam resists (eg. COP) known to exhibit a strong time dependence on processing. Electrical linewidth studies and scanning electron microscopy data are employed in these studies.

Paper Details

Date Published: 14 June 1988
PDF: 14 pages
Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945645
Show Author Affiliations
Mark deGrandpre, Rohm and Haas Co (United States)
Karen Graziano, Rohm and Haas Co. (United States)
Stephen D Thompson, Rohm and Haas Co. (United States)
Hua-yu Liu, Hewlett Packard Co. (United States)
Lauren Blum, Shipley Co. Inc (United States)

Published in SPIE Proceedings Vol. 0923:
Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII
Arnold W. Yanof, Editor(s)

© SPIE. Terms of Use
Back to Top