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Proceedings Paper

New Energy-Dependent Soft X-Rav Damage In MOS Devices
Author(s): Tung-Yi Chan; Henry Gaw; Daniel Seligson; Lawrence Pan; Paul L. King; Piero Pianetta
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Paper Abstract

An energy-dependent soft x-ray-induced device damage has been discovered in MOS devices fabricated using standard CMOS process. MOS devices were irradiated by monochromatic x-rays in energy range just above and below the silicon K-edge (1.84 keV). Photons below the K-edge is found to create more damage in the oxide and oxide/silicon interface than photons above the K-edge. This energy-dependent damage effect is believed to be due to charge traps generated during device fabrication. It is found that data for both n- and p-type devices lie along a universal curve if normalized threshold voltage shifts are plotted against absorbed dose in the oxide. The threshold voltage shift saturates when the absorbed dose in the oxide exceeds 1.4X105 mJ/cm3, corresponding to 6 Mrad in the oxide. Using isochronal anneals, the trapped charge damage is found to recover with an activation energy of 0.38 eV. A discrete radiation-induced damage state appears in the low frequency C-V curve in a temperature range from 1750C to 325°C.

Paper Details

Date Published: 14 June 1988
PDF: 9 pages
Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945633
Show Author Affiliations
Tung-Yi Chan, Intel Corporation (United States)
Henry Gaw, Intel Corporation (United States)
Daniel Seligson, Intel Corporation (United States)
Lawrence Pan, Stanford Synchrotron Radiation Laboratory (United States)
Paul L. King, Stanford Synchrotron Radiation Laboratory (United States)
Piero Pianetta, Stanford Synchrotron Radiation Laboratory (United States)

Published in SPIE Proceedings Vol. 0923:
Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII
Arnold W. Yanof, Editor(s)

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