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Proceedings Paper

Fabrication Of 0.5 µm Poly-Si And Aluminum Interconnections By Means Of X-Ray Lithography And Plasma Etching
Author(s): G Zwicker; L. Csepregi; H.-L. Huber; W Windbracke; A Heuberger
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Paper Abstract

This paper describes the replication and transfer of half-μm patterns into poly-Si and aluminum layers by means of x-ray lithography with synchrotron radiation and subsequent dry etching. The results show that plasma etching in a parallel plate reactor with powered upper electrode, working in the high pressure region is capable of anisotropic replication of half-μm features. Two novolak-based x-ray sensitive resists, Hunt HPR 204 and Hunt WX 242, were used as an etch mask. The processes employed were CC14/He and C12/BC1J/CC14/N2 recipes for structuring poly-Si and aluminum respectively. The optimization of the Al etch recipe showed that the linewidth loss can be reduced below 0.05 pm by proper adjustment of the nitrogen flow.

Paper Details

Date Published: 14 June 1988
PDF: 8 pages
Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945632
Show Author Affiliations
G Zwicker, Fraunhofer-Institut fur Mikrostrukturtechnik (IMT) (Germany)
L. Csepregi, Fraunhofer-Institut fur Mikrostrukturtechnik (IMT) (Germany)
H.-L. Huber, Fraunhofer-Institut fur Mikrostrukturtechnik (IMT) (Germany)
W Windbracke, Fraunhofer-Institut fur Mikrostrukturtechnik (IMT) (Germany)
A Heuberger, Fraunhofer-Institut fur Mikrostrukturtechnik (IMT) (Germany)


Published in SPIE Proceedings Vol. 0923:
Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII
Arnold W. Yanof, Editor(s)

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