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Proceedings Paper

Microlithography Using A Laser Plasma Created X-Ray Source
Author(s): M Chaker; B Lafontaine; J C Kieffer; P P Mercier; H Pepin; J Bernard; D Villeneuve; H Baldis; J F Currie; I Toubhans
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Paper Abstract

Laser produced plasmas are investigated both theoretically and experimentally with respect to their suitability as X-ray lithography sources. We find that a minimum of 100 W average laser power is required for an acceptable wafer throughput (36 6 in. wafer/h). In addition, the optimization of the X-ray conversion efficiency in the keV range (0.75-2 keV) necessitates a laser intensity greater than 1 x 1013 W cm-2 and a judicious choice of target atomic number. We also describe a simulation program called XLIMLAS which can be used, for instance, to determine the laser conditions which maximize the energy deposited in the resist by matching the X-ray spectrum to the wavelength dependent mask substrate transmission and to the resist absorption. Moreover, this optimisation must ensure a high quality of the resist line edge profiles. Finally, we present some experimental results on sensitivity and patternability of FBM120 resist.

Paper Details

Date Published: 14 June 1988
PDF: 8 pages
Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); doi: 10.1117/12.945629
Show Author Affiliations
M Chaker, Universite du Quebec (Canada)
B Lafontaine, Universite du Quebec (Canada)
J C Kieffer, Universite du Quebec (Canada)
P P Mercier, Universite du Quebec (Canada)
H Pepin, Universite du Quebec (Canada)
J Bernard, National Research Council (Canada)
D Villeneuve, National Research Council (Canada)
H Baldis, National Research Council (Canada)
J F Currie, Ecole Polytechnique (Canada)
I Toubhans, L.U.L.I (France)


Published in SPIE Proceedings Vol. 0923:
Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII
Arnold W. Yanof, Editor(s)

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