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Proceedings Paper

Comprehensive Model For HgCdTe Photoconductor Sensitivity
Author(s): N Oda
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Paper Abstract

Model for HgCdTe photoconductor sensitivity was constructed by solving a three dimensional (3-D) transport equation. The model takes into account recombination velocities at crystal side walls and surfaces, device temperature rise due to bias current Joule heat and temperature dependence of ambipolar mobility. Parameters, i.e., recombination velocity at crystal side wall, minority carrier bulk lifetime and majority carrier concentration were fixed by comparing the measured responsivity and carrier lifetime with the calculated responsivity and carrier lifetime. Using parameters thus fixed, noise was calculated and was compared with the measured noise. Good agreement between the calculated and the measured noises was obtained.

Paper Details

Date Published: 3 October 1988
PDF: 9 pages
Proc. SPIE 0915, Recent Developments in Infrared Components and Subsystems, (3 October 1988); doi: 10.1117/12.945533
Show Author Affiliations
N Oda, NEC Corporation (Japan)


Published in SPIE Proceedings Vol. 0915:
Recent Developments in Infrared Components and Subsystems

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