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Proceedings Paper

Radiation Response Of A Radiation-Hardened Si Photodiode Incorporating A Sinker Diffusion
Author(s): T. A. Fischer; J. J. Wiczer
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Paper Abstract

A commercially available, epitaxially-grown, Si photodiode was irradiated with 18 MeV electrons, 1-10 MeV x-rays, and neutrons from a pulsed reactor. The device structure is given, the radiation-hardened design features are discussed and their inherent limitations are identified. The ionizing radiation sensitivity and neutron-induced, permanent damage to quantum efficiency and leakage current have been measured. Empirical fits to the data are presented to aid optoelectronic sub-system designers in predicting device performance in various radiation environments.

Paper Details

Date Published: 15 October 1984
PDF: 6 pages
Proc. SPIE 0506, Fiber Optics in Adverse Environments II, (15 October 1984); doi: 10.1117/12.944930
Show Author Affiliations
T. A. Fischer, Sandia National Laboratories (United States)
J. J. Wiczer, Sandia National Laboratories (United States)


Published in SPIE Proceedings Vol. 0506:
Fiber Optics in Adverse Environments II
Roger A. Greenwell, Editor(s)

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