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Proceedings Paper

A1Gaas/Gaas Radiation Hardened Photodiodes
Author(s): J . J. Wiczer; C. E. Barnes; T. A. Fischer; L. R. Dawson; T. E. Zipperian
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Paper Abstract

We report on AlGaAs/GaAs double heterojunction photodiodes designed and fabricated to be resistant to the effects of ionizing-radiation. The work described here includes new results comparing optimized, AlGaAs/GaAs photodiodes grown with two different growth processes: liquid phase epitaxy and molecular beam epitaxy. These devices were processed with similar photo-lithographic masks and exposed to high energy neutrons, electrons, and photons. Electrical and optical characterizations were completed before and after each irradiation; degradation trends are reported.

Paper Details

Date Published: 15 October 1984
PDF: 7 pages
Proc. SPIE 0506, Fiber Optics in Adverse Environments II, (15 October 1984); doi: 10.1117/12.944929
Show Author Affiliations
J . J. Wiczer, Sandia National Laboratories (United States)
C. E. Barnes, Sandia National Laboratories (United States)
T. A. Fischer, Sandia National Laboratories (United States)
L. R. Dawson, Sandia National Laboratories (United States)
T. E. Zipperian, Sandia National Laboratories (United States)

Published in SPIE Proceedings Vol. 0506:
Fiber Optics in Adverse Environments II
Roger A. Greenwell, Editor(s)

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