Share Email Print
cover

Proceedings Paper

Study On The Electrical And Optical Properties Of A-Si1-x Sn X:H Films Prepared By Sputtering
Author(s): Chen Guang-hua; Zhang Nan-ping; He De-yan; Zhang Fang-qing
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Hydrogenated amorphous silicon-tin alloy (a-Si1_xSnx:H) films were prepared by simultaneous rf sputtering of polycrystalline silicon and tin in a H2- Ar gas mixture. The optical gap E0 of the films depends on alloy composition x and preparation conditions. As tin content increases, the optical gap of the films becomes narrower linearly, but the dark conductivity increases exponentially. For films at lower substrate temperature and target power density, the optical gap becomes wider.

Paper Details

Date Published: 2 November 1984
PDF: 4 pages
Proc. SPIE 0502, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion III, (2 November 1984); doi: 10.1117/12.944796
Show Author Affiliations
Chen Guang-hua, Lanzhou University (China)
Zhang Nan-ping, Lanzhou University (China)
He De-yan, Lanzhou University (China)
Zhang Fang-qing, Lanzhou University (China)


Published in SPIE Proceedings Vol. 0502:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion III
Carl M. Lampert, Editor(s)

© SPIE. Terms of Use
Back to Top