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Proceedings Paper

Bandgap Widening In Heavily Doped Oxide Semiconductors Used As Transparent Heat-Reflectors
Author(s): I. Hamberg; C. G. Granqvist; K.F. Berggren; B. E. Sernelius; L. Engstrom
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Paper Abstract

Doped oxide semiconductors,which are widely used as transparent heat-reflectors, have a wider energy gap than the undoped material. This bandgap widening was investigated in 1n203 and 1n203:Sn. Empirical data were extracted for coatings with electron density 1021 cm-3. They are interpreted within an effective-mass-model for n-doped semiconductors well above the Mott critical density. The impurities are ionized and the associated elect-rons occupy the bottom of the conduction band in the form of an electron gas. The model accounts for a Burstein-Moss shift as well as electron-electron and electron-impurity scattering treated in the Random Phase Approximation. Experiments and theory were recon-ciled by assuming a parabolic valence band with an effective mass ti 0.6 m. Earlier work on doped oxide semiconductors are assessed and criticized in the light of the present results.

Paper Details

Date Published: 2 November 1984
PDF: 8 pages
Proc. SPIE 0502, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion III, (2 November 1984); doi: 10.1117/12.944778
Show Author Affiliations
I. Hamberg, Chalmers University of Technology (Sweden)
C. G. Granqvist, Chalmers University of Technology (Sweden)
K.F. Berggren, Linkoping University (Sweden)
B. E. Sernelius, Linkoping University (Sweden)
L. Engstrom, Linkoping University (Sweden)

Published in SPIE Proceedings Vol. 0502:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion III
Carl M. Lampert, Editor(s)

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