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Proceedings Paper

Transverse Mode Stabilized 670Nm Atgainp Visible-Light Laser Diodes
Author(s): Kenichi Kobayashi; Seiji Kawata; Hiroaki Fujii; Isao Hino; Akiko Gomyo; Hiiosh Hotta; Tohru Suzuki
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Paper Abstract

Transverse mode stabilized AIGaInP visible light laser diodes are described and their high power operations are discussed. The laser structure applied for transverse mode stabilization is a ridge shape self-aligned structure, which is designed taking fabrication reproducibility into consideration. A very thin GaInP etching stopper layer is introduced in order to enable easy and accurate control of the dimensions of the self-aligned structure. Threshold current is about 30-50mA. Over 10mW output power is obtained for LDs with as-cleaved facets. Output power is limited by COD (catastrophic optical damage). COD power level under continuous-wave (cw) operation is estimated to be 1.4-1.7MW/cm2. After facet-coating, a stable fundamental mode operation, up to 20mw (cw), and maximum output power 31mW (cw), which is limited by COD, have been obtained. The lasing wavelength is 670nm.

Paper Details

Date Published: 2 June 1988
PDF: 7 pages
Proc. SPIE 0898, Miniature Optics and Lasers, (2 June 1988); doi: 10.1117/12.944576
Show Author Affiliations
Kenichi Kobayashi, NEC Corporation (Japan)
Seiji Kawata, NEC Corporation (Japan)
Hiroaki Fujii, NEC Corporation (Japan)
Isao Hino, NEC Corporation (Japan)
Akiko Gomyo, NEC Corporation (Japan)
Hiiosh Hotta, NEC Corporation (Japan)
Tohru Suzuki, NEC Corporation (Japan)


Published in SPIE Proceedings Vol. 0898:
Miniature Optics and Lasers
Laurence E. Cramer; Gary T. Forrest; Chandrasekhar Roychoudhuri, Editor(s)

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