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Proceedings Paper

Ultra-Violet Confocal Metrology
Author(s): Simon D Bennett; Eric A Peltzer; Ian R Smith
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Paper Abstract

This paper describes a semiconductor metrology system based upon ultra-violet wavelength confocal microscopy. The system is capable of linear metrology of resist features down to 0.5 microns linewidth with low dependence on substrate type. Short term precision of better than 5nm standard deviation can be obtained with this system. The optical design for 325nm operation is described together with details of the data acquisition system. Experimental data compares the performance of ultra-violet and visible light versions of the system for resist metrology, showing the benefit of using a wavelength at which the resist is absorbent. Conclusions are drawn about optimal regimes for metrology as well as the extension of this technology to yet shorter ultra-violet wavelengths.

Paper Details

Date Published: 12 July 1988
PDF: 9 pages
Proc. SPIE 0897, Scanning Microscopy Technologies and Applications, (12 July 1988); doi: 10.1117/12.944516
Show Author Affiliations
Simon D Bennett, SiScan Systems (United States)
Eric A Peltzer, SiScan Systems (United States)
Ian R Smith, SiScan Systems (United States)

Published in SPIE Proceedings Vol. 0897:
Scanning Microscopy Technologies and Applications
E. Clayton Teague, Editor(s)

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