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Proceedings Paper

Nonlinear Optical Properties Of Strained GaAs-InxGa1-xAs Multiple Quantum Well Structures Using A Titanium Sapphire Laser Probe
Author(s): K Aron; G Hansen; R Stone; R Lytel; W W Anderson
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Paper Abstract

The nonlinear saturation of the excitonic absorbtion in a GaAs-InxGa 1-xAs multiple quantum well sample consisting of 80 wells was investigated in the vicinity of the excitonic resonance at 991 nm using a tuneable titanium sapphire laser probe. This characterization yields a saturation intensity s of less than 50 kW/cm and a maximum off-resonance nonlinear refractive index of 6.42 x 10-7 cm2/W. It is shown that this dispersion can lead to practical optically bistable etalons fabricated from these multiple quantum well structures.

Paper Details

Date Published: 27 June 1988
PDF: 6 pages
Proc. SPIE 0895, Laser Optics for Intracavity and Extracavity Applications, (27 June 1988); doi: 10.1117/12.944440
Show Author Affiliations
K Aron, Lockheed Palo Alto Research Laboratory (United States)
G Hansen, Lockheed Palo Alto Research Laboratory (United States)
R Stone, Lockheed Palo Alto Research Laboratory (United States)
R Lytel, Lockheed Palo Alto Research Laboratory (United States)
W W Anderson, Lockheed Palo Alto Research Laboratory (United States)


Published in SPIE Proceedings Vol. 0895:
Laser Optics for Intracavity and Extracavity Applications
Philippe M. Fauchet; Karl H. Guenther, Editor(s)

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