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Proceedings Paper

Epitaxial Semiconductor Films Grown By Laser Photochemical Vapor Deposition
Author(s): J G Eden; V Tavitian; C J Kiely
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Paper Abstract

Experiments in which epitaxial semiconductor films (Ge) have been grown by laser photochemical vapor deposition (LPVD) are described. The results provide a clear example of the ability of LPVD to grow epitaxial films under conditions in which growth is not attrib-utable to substrate heating or adlayer photolysis but rather to species generated photochemically and in the gas phase.

Paper Details

Date Published: 12 July 1988
PDF: 2 pages
Proc. SPIE 0894, Gas Laser Technology, (12 July 1988); doi: 10.1117/12.944386
Show Author Affiliations
J G Eden, University of Illinois (United States)
V Tavitian, University of Illinois (United States)
C J Kiely, University of Illinois (United States)

Published in SPIE Proceedings Vol. 0894:
Gas Laser Technology
Peter P. Chenausky; Roland A. Sauerbrey; James H. Tillotson, Editor(s)

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