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Proceedings Paper

Broad Area Graded Barrier Quantum Well Heterostructure Lasers By Metalorganic Chemical Vapor Deposition For High Power Applications
Author(s): M E Givens; C A Zmudzinski; R P Bryan; J J Coleman
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Paper Abstract

Graded barrier quantum well (GBQW) heterostructure broad area lasers are capable of high power pulsed and cw operation. In this paper, we describe some of the design issues involving broad area graded barrier quantum well heterostructure lasers grown by metalorganic chemical vapor deposition including the effect of junction heating in cw devices and the effect of various buffer layer structures on laser characteristics. We also outline some high power laser diode results for uncoated broad area devices.

Paper Details

Date Published: 9 August 1988
PDF: 5 pages
Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); doi: 10.1117/12.944364
Show Author Affiliations
M E Givens, University of Illinois (United States)
C A Zmudzinski, University of Illinois (United States)
R P Bryan, University of Illinois (United States)
J J Coleman, University of Illinois (United States)

Published in SPIE Proceedings Vol. 0893:
High Power Laser Diodes and Applications
Luis Figueroa, Editor(s)

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