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Proceedings Paper

Progress In Single Quantum Well Structures For High Power Laser Device Applications
Author(s): R G Waters; P L Tihanyi; D S Hill; B A Soltz
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Paper Abstract

Recent advances made in our laboratory toward performance optimization of (A1)GaAs quantum well lasers are described. Topics to he covered include: laser reliability for broad-area devices emitting less than 300mW and its relation to the epitaxial structure and operating current density; parametric crystal growth studies and the implications for device efficiency; realization of 57% cw power conversion efficiency in an oxide-defined device; progress in dry-etching technology including array fabrication and development of device-quality laser facets suitable for integration. Finally, work in the high-power regime (>5 Watt) will be discussed. This includes broad-area single-emitter lasers emitting 6W cw.

Paper Details

Date Published: 9 August 1988
PDF: 7 pages
Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); doi: 10.1117/12.944363
Show Author Affiliations
R G Waters, McDonnell Douglas Astronautics Company (United States)
P L Tihanyi, McDonnell Douglas Astronautics Company (United States)
D S Hill, McDonnell Douglas Astronautics Company (United States)
B A Soltz, McDonnell Douglas Astronautics Company (United States)


Published in SPIE Proceedings Vol. 0893:
High Power Laser Diodes and Applications
Luis Figueroa, Editor(s)

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