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A Simplified Thermal Model For Calculating The Maximum Cw Output Power From Narrow Stripe Geometry InGaAsP/InP Lasers
Author(s): M Arvind; H Hsing; L Figueroa
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Paper Abstract

A one-dimensional thermal model has been extensively modified for calculating the maximum output power from InGaAsP/InP (X = 1.3 μm) semiconductor lasers, whose output power is limited by thermal considerations. The effect of Auger recombination which plays a significant role'in these lasers at high temperatures is included. We have also incorporated the temperature dependence of efficiency from first prin-ciples using experimentally available data for Auger and radiative recombination coefficients. Calculations made on InGaAsP/InP lasers show that a maximum CW power of 57 mW/facet (Diamond Heat Sink) and a maximum operating temperature of up to 132° C for a geometry similar to the Double-Channel Buried Heterostructure (DC-PBH) laser can be achieved. In addition, the model has been used to determine the maximum achiev-able power as a function of device geometry (active layer thickness, width and length of the device). We find that by increasing the length of the laser from 300 microns to 700 microns we can increase the output power of the laser by 79%. The results obtained agree reasonably well with experiment.

Paper Details

Date Published: 9 August 1988
PDF: 72 pages
Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); doi: 10.1117/12.944357
Show Author Affiliations
M Arvind, University of Florida (United States)
H Hsing, University of Florida (United States)
L Figueroa, University of Florida (United States)

Published in SPIE Proceedings Vol. 0893:
High Power Laser Diodes and Applications
Luis Figueroa, Editor(s)

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