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Proceedings Paper

InGaAsP/InP High-Power Single-Element Diode Lasers
Author(s): C B Morrison; D Botez; L M Zinkiewicz; D Tran; E A Rezek; E R Anderson
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Paper Abstract

Recent results of our work an InGaAsP/InP single element, diode lasers are presented. Two structures are compared: 1) the double channel planar buried heterostructure (DCPBH) and 2) the buried crescent on p-type substrates (p-BC), for power and optical-beam quality. Lifetest data for our DCPBH's is given, and compared to recently published lifetest data for p-BOs. It is clear that InGaAsP/InP lasers have high reliability at high output powers, and that buried crescent-type structures have superior optical quality in the output beam over DCPBH structures.

Paper Details

Date Published: 9 August 1988
PDF: 7 pages
Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); doi: 10.1117/12.944355
Show Author Affiliations
C B Morrison, TRW Space & Technology Group (United States)
D Botez, TRW Space & Technology Group (United States)
L M Zinkiewicz, TRW Space & Technology Group (United States)
D Tran, TRW Space & Technology Group (United States)
E A Rezek, TRW Space & Technology Group (United States)
E R Anderson, TRW Space & Technology Group (United States)


Published in SPIE Proceedings Vol. 0893:
High Power Laser Diodes and Applications
Luis Figueroa, Editor(s)

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