Share Email Print

Proceedings Paper

High Power Laser Diodes For The NASA Direct Detection Laser Transceiver Experiment
Author(s): Bernard D Seery; Terry L. Holcomb
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

High power semiconductor laser diodes from the Matsushita Electronics Corporation have been selected by TRW for use in the NASA space laser communications experiments. Three 70 mW buried twin ridge substrate (BTRS) GaA lAs lasers, operating in a band of wavelengths near 870 nm, will be outfitted with an external cavity "third" mirror element and coaligned using narrow bandpass filters. Diode selection criteria, design features, and measured performance data will be discussed.

Paper Details

Date Published: 9 August 1988
PDF: 9 pages
Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); doi: 10.1117/12.944353
Show Author Affiliations
Bernard D Seery, TRW Defense Communications Division (United States)
Terry L. Holcomb, TRW Defense Communications Division (United States)

Published in SPIE Proceedings Vol. 0893:
High Power Laser Diodes and Applications
Luis Figueroa, Editor(s)

© SPIE. Terms of Use
Back to Top