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Proceedings Paper

High-Power Edge-And Surface-Emitting AlGaAs Semiconductor Lasers
Author(s): G A Evans; J K Butler; D B Carlin; N W Carlson; J C Connolly; J M Hammer
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Paper Abstract

Channeled-Substrate-Planar (CSP) AlGaAs/GaAs semiconductor lasers are important, established, commercial products and have been extensively studied both experimentally and theoretically.1-12 They have single spatial mode output powers as high as any single element semiconductor laser4,5 and have demonstrated long life at very high power.6 They have been used as the elements in linear13,14 and Y-guide15,16 arrays . Originally grown by liquid phase epitaxy (LPE) on n-types and later p-type2 GaAs substrates, functionally equivalent structures are also grown by metalorganic chemical vapor deposition (MOCVD)17,18 and molecular beam epitaxy (MBE).19,20 In contrast to CSP lasers, Grating Surface Emitting (GSE) lasers are just now moving beyond the "laboratory curiosity" phase, having demonstrated the capability for high power and moderate efficiencies.21 GSE lasers offer the potential for very high power (> 1W) and high brightness when integrated into coherent one-dimensional22 and two-dimensional arrays.23 Although an early GSE laser was based on a conventional CSP structure,24 recent rapid improvements in GSE performance are a result of advances in 1) material growth technologies which provide quantum well capability and 2) processing technology. In this paper, we review the lateral guiding mechanism of CSP lasers and compare experimental and analytical results of CSP lasers with geometrical and compositional nonuniformities. Finally, we review the structures and performance of recent GSE lasers.

Paper Details

Date Published: 9 August 1988
PDF: 17 pages
Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); doi: 10.1117/12.944351
Show Author Affiliations
G A Evans, David Sarnoff Research Center (United States)
J K Butler, David Sarnoff Research Center (United States)
D B Carlin, David Sarnoff Research Center (United States)
N W Carlson, David Sarnoff Research Center (United States)
J C Connolly, David Sarnoff Research Center (United States)
J M Hammer, David Sarnoff Research Center (United States)

Published in SPIE Proceedings Vol. 0893:
High Power Laser Diodes and Applications
Luis Figueroa, Editor(s)

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