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Proceedings Paper

Single Stripe High Power Laser Diodes Made By Metal-Organic Chemical Vapor Deposition
Author(s): K Honda; T Mamine; M Ayabe
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Paper Abstract

Single stripe broad area GaAs/A1GaAs laser diodes were fabricated by Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxial growth method. A CW output power of more than 1 watt was obtained with a single-lobed transverse-mode operation. The power conversion efficiency of the laser was as high as 33% with relatively low operating current. Both the transverse and longitudinal modes show basically single-lobed envelopes with fine components. The characteristics of these lasers can be explained by the mixed state of the fundamental and higher-order modes.

Paper Details

Date Published: 9 August 1988
PDF: 5 pages
Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); doi: 10.1117/12.944345
Show Author Affiliations
K Honda, Sony Corporation (Japan)
T Mamine, Sony Corporation (Japan)
M Ayabe, Sony Corporation (Japan)

Published in SPIE Proceedings Vol. 0893:
High Power Laser Diodes and Applications
Luis Figueroa, Editor(s)

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