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Proceedings Paper

Microwave Response Of An HEMT Photoconductor
Author(s): P C Claspy; K B. Bhasin
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Paper Abstract

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

Paper Details

Date Published: 12 April 1988
PDF: 6 pages
Proc. SPIE 0886, Optoelectronic Signal Processing for Phased-Array Antennas, (12 April 1988); doi: 10.1117/12.944179
Show Author Affiliations
P C Claspy, Case Western Reserve University (United States)
K B. Bhasin, National Aeronautics and Space Administration (United States)


Published in SPIE Proceedings Vol. 0886:
Optoelectronic Signal Processing for Phased-Array Antennas
Kul B. Bhasin; Brian M. Hendrickson, Editor(s)

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