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Proceedings Paper

Nonlinear Measurements In Multiple Quantum Wells Of Gaas/Algaas Fabricated By Mocvd
Author(s): A Kost; M Kawase; E Garmire; H C Lee; A Danner; A Hariz; P D Dapkus
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Paper Abstract

We discuss the saturation intensities and saturation densities as a function of well width for the room temperature excitonic absorption resonance of GaAs/A1GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. The optimum growth temperature is considered. We discuss techniques for calculating absorption coefficients that remove Fabry-Perot effects as well as the effects of carrier diffusion. The difference between pulsed and CW excitation of the mutliple quantum wells is addressed. We discuss the calculation of the nonlinear index of refraction from a discrete set of absorption data. We introduce a new structure (a hetero n-i-p-i) which combines the advantages of multiple quantum wells and doping superlattices.

Paper Details

Date Published: 3 May 1988
PDF: 9 pages
Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); doi: 10.1117/12.944071
Show Author Affiliations
A Kost, University of Southern California (United States)
M Kawase, University of Southern California (United States)
E Garmire, University of Southern California (United States)
H C Lee, University of Southern California (United States)
A Danner, University of Southern California (United States)
A Hariz, University of Southern California (United States)
P D Dapkus, University of Southern California (United States)


Published in SPIE Proceedings Vol. 0881:
Optical Computing and Nonlinear Materials
Nasser Peyghambarian, Editor(s)

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