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Proceedings Paper

Excitonic Optical Nonlinearities In ZnSe Epitaxial Films
Author(s): J E Potts; H Cheng; S H Park; B Fluegel; M Joffre; S W Koch; N Peyghambarian
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Paper Abstract

Excitonic optical nonlinearities in epitaxial ZnSe thin films have been measured at 150 and 300K. The measured nonlinear response, An/N = 1.8X10-19 cm3 at 300K, is comparable to that observed in bulk GaAs and GaAs/AlGaAs multiple quantum well systems. Analysis of these results using our partly-phenomenological plasma theory indicates that the mechanisms responsible for this nonlinearity at room temperature are exciton screening and density-dependent broadening. At 150K, exciton screening makes the major contribution to the nonlinearity. Using femtosecond laser techniques, we have determined that the nonlinearity turns off in times on the order of 50-100 ps. These excitonic nonlinearities are, therefore, both large in magnitude and extremely rapid.

Paper Details

Date Published: 3 May 1988
PDF: 7 pages
Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); doi: 10.1117/12.944069
Show Author Affiliations
J E Potts, 3M Company (United States)
H Cheng, 3M Company (United States)
S H Park, University of Arizona (United States)
B Fluegel, University of Arizona (United States)
M Joffre, University of Arizona (United States)
S W Koch, University of Arizona (United States)
N Peyghambarian, University of Arizona (United States)


Published in SPIE Proceedings Vol. 0881:
Optical Computing and Nonlinear Materials
Nasser Peyghambarian, Editor(s)

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