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Proceedings Paper

Optically Induced Index Of Refraction Changes In Gallium Arsenide Doping Superlattices
Author(s): T B Simpson; C A Pennise; J D Bruno; M S Tobin; M Dutta
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Paper Abstract

Changes in the reflection and transmission spectra of GaAs doping superlattices due to optical excitation of carriers are measured. Modulated transmission and reflection spectra show that both the real and imaginary parts of the complex refractive index are affected in the spectral region near and below the GaAs band gap. Modulated transmission measurements of 1064-nm light through a 1-mm-long waveguide sample show significant modulation at room temperature. In the sample studied, large below-gap absorption was observed which could not be reduced by optical excitation. We associate this absorption with an impurity or trap level located approximately 200 meV below the GaAs band gap.

Paper Details

Date Published: 3 May 1988
PDF: 8 pages
Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); doi: 10.1117/12.944067
Show Author Affiliations
T B Simpson, Harry Diamond Laboratories (United States)
C A Pennise, Harry Diamond Laboratories (United States)
J D Bruno, Harry Diamond Laboratories (United States)
M S Tobin, Harry Diamond Laboratories (United States)
M Dutta, Electronics Technology and Devices Laboratory (United States)


Published in SPIE Proceedings Vol. 0881:
Optical Computing and Nonlinear Materials
Nasser Peyghambarian, Editor(s)

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