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Proceedings Paper

Computer Simulations Of Transient Operation Of Gaas Etalons
Author(s): M E Warren; D Richardson; S W Koch; H M Gibbs
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Paper Abstract

Time-dependent behavior of GaAs nonlinear Fabry-Perot etalons has been investigated with a computer model using the Banyai-Koch plasma theory for the GaAs nonlinear optical properties. Investigation of single-wavelength transient operation of GaAs etalons as optical logic gates has shown that useful differential energy gain is not achievable for optical pulses shorter than about ten times the charge carrier lifetime in the semiconductor.

Paper Details

Date Published: 3 May 1988
PDF: 7 pages
Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); doi: 10.1117/12.944061
Show Author Affiliations
M E Warren, University of Arizona (United States)
D Richardson, University of Arizona (United States)
S W Koch, University of Arizona (United States)
H M Gibbs, University of Arizona (United States)


Published in SPIE Proceedings Vol. 0881:
Optical Computing and Nonlinear Materials
Nasser Peyghambarian, Editor(s)

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