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Proceedings Paper

Free-Carrier Induced Optical Nonlinearities In Semiconductors
Author(s): P. A. Wolff; S. Y. Yuen; K. A. Harris; J. W. Cook; J. F. Schetzina
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Paper Abstract

HgTe and zero-gap HgCdTe have record, picosecond speed, optical nonlinearities at 10.6μ. They are caused by carrier temperature modulation, which produces large carrier density variations in zero-gap materials. The thermal process is only beginning to saturate at 1 MW/cm2; at that intensity , the dielectric constant of HgTe is modulated by about 10%. Further enhancement of these nonlinearities may be achieved with suitable doping or alloying.

Paper Details

Date Published: 3 May 1988
PDF: 5 pages
Proc. SPIE 0878, Multifunctional Materials, (3 May 1988); doi: 10.1117/12.943956
Show Author Affiliations
P. A. Wolff, Massachusetts Institute of Technology (United States)
S. Y. Yuen, Massachusetts Institute of Technology (United States)
K. A. Harris, North Carolina State University (United States)
J. W. Cook, North Carolina State University (United States)
J. F. Schetzina, North Carolina State University (United States)


Published in SPIE Proceedings Vol. 0878:
Multifunctional Materials
Robert L. Gunshor, Editor(s)

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