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Proceedings Paper

The Investigation Of Type III-Type I Strained-Layer Superlattice System: Hg[sub]1-x[/sub]Zn[sub]x[/sub]Te-CdTe
Author(s): X. Chu; S. Sivananthan; J. P. Faurie
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Paper Abstract

We report here the results of Hgl-xZnxTe-CdTe strained-layer superlattices grown by MBE. This superlattice system has been chosen in order to investigate the effect of the strain in Type III and Type I superlattices. Hgl-xZnxTe-CdTe superlattices with different strain have been grown on CdTe(111)B/GaAs(100) and CdTe(100)/GaAs(100) substrates and characterized in situ by electron diffraction and ex situ by X-ray diffraction, infrared transmission and Hall measurements. The high quality of Hgl-xZnxTe-CdTe super-lattices is attested by the presence of satellite peaks in the X-ray spectra. The values of hole mobilities between 5x103 up to 2x104cm2v-ls-1 at T-23K along (111)B growth orientation and up to 4.9x104cm2v-1s-1 at 5K along (100) growth orientation are obtained for Type III superlattices whereas in Type I superlattices hole mobility is between 200-300cm2v-ls-1. Hg1-xZnxTe-CdTe superlattices with n-type character have also been obtained. A p- to n-type transition is observed when increasing HgZnTe layer thickness and/or decreasing CdTe layer thickness. Electron mobilities as high as 2.5x10-5cm2v-ls-1 have been reached.

Paper Details

Date Published: 3 May 1988
PDF: 5 pages
Proc. SPIE 0878, Multifunctional Materials, (3 May 1988); doi: 10.1117/12.943954
Show Author Affiliations
X. Chu, University of Illinois at Chicago (United States)
S. Sivananthan, University of Illinois at Chicago (United States)
J. P. Faurie, University of Illinois at Chicago (United States)


Published in SPIE Proceedings Vol. 0878:
Multifunctional Materials
Robert L. Gunshor, Editor(s)

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