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Proceedings Paper

Laser Processing For Interconnect Technology
Author(s): H S Cole; Y S Liu; R Guida; J Rose
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Paper Abstract

Laser processing of polyimide dielectric layers for use in high-density interconnect structures was studied. A pulsed excimer laser was used to photoetch via holes and a CW argon ion laser operating at 351 nm was used to selectively deposit catalytic amounts of palladium on polyimide. Subsequent immersion of the irradiated samples in an electroless copper solution resulted in selective copper deposition.

Paper Details

Date Published: 18 May 1988
PDF: 5 pages
Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); doi: 10.1117/12.943946
Show Author Affiliations
H S Cole, GE Research and Development Center (United States)
Y S Liu, GE Research and Development Center (United States)
R Guida, GE Research and Development Center (United States)
J Rose, GE Research and Development Center (United States)


Published in SPIE Proceedings Vol. 0877:
Micro-Optoelectronic Materials
Carl A. Kukkonen, Editor(s)

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