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Proceedings Paper

Diamond Synthesis By Hollow Cathode Plasma Assisted Chemical Vapor Deposition
Author(s): B. Singh; O R Mesker; A W Levine; Y Arie
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Paper Abstract

A method which combines thermal and plasma dissociation of a methane/hydrogen gas mixture for low pressure chemical vapor deposition of diamond is described. A hot, thin-walled, refractory metal cathode is used to generate a high-current, low-voltage discharge. The substrates are located on the anode and immersed in the plasma emanating from the cathode tip. No auxiliary substrate heating is employed. Polycrystalline diamond particles and films are obtained on silicon (100) and molybdenum substrates at growth rates of 1-3 μm/hour. Data on the effects on diamond growth of the various pro-cess parameters along with some operating characteristics of the hollow cathode are presented.

Paper Details

Date Published: 18 May 1988
PDF: 9 pages
Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); doi: 10.1117/12.943942
Show Author Affiliations
B. Singh, David Sarnoff Research Center (United States)
O R Mesker, David Sarnoff Research Center (United States)
A W Levine, David Sarnoff Research Center (United States)
Y Arie, David Sarnoff Research Center (United States)


Published in SPIE Proceedings Vol. 0877:
Micro-Optoelectronic Materials
Carl A. Kukkonen, Editor(s)

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