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Proceedings Paper

Nondestructive Characterization Of MOCVD-Grown GaInAs/GaAs Using Rocking Curve And Topography
Author(s): Chu R Wie; H M Kim; K M Lau
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Paper Abstract

Partially relaxed GaInAs layers grown on (001) GaAs substrates by Metalorganic Chemical Vapor Deposition are studied using x-ray rocking curve (XRC) and double crystal topography, energy dispersive x-ray analysis (EDAX), and Nomarski phase contrast microscopy. Epilayers of 1 - 7 gm thickness are grown on various buffer layers. Epilayers grown on a plain GaAs buffer layer and on a graded GaInAs buffer layer contain many line defects (LD) and show cross-hatched patterns on the surface. The layer grown on a strained layer superlattice buffer layer is free of LD's and of the cross-hatched patterns. All the layers are relaxed by differing amounts along the two <110> directions. The XRC and EDAX measurements of the ternary layer compositions agree reasonably well. The mean spacing of misfit dislocations from XRC and the LD spacing from topography agree in the order of magnitude with the electron microscopy measurements by others. The XRC data on x-ray strain, elastic strain, and the misorientation angle between the epilayer and substrate are also presented.

Paper Details

Date Published: 18 May 1988
PDF: 11 pages
Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); doi: 10.1117/12.943938
Show Author Affiliations
Chu R Wie, State University of New York at Buffalo (United States)
H M Kim, State University of New York at Buffalo (United States)
K M Lau, University of Massachusetts (United States)

Published in SPIE Proceedings Vol. 0877:
Micro-Optoelectronic Materials
Carl A. Kukkonen, Editor(s)

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