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Proceedings Paper

Electrical Characteristics Of MBE-Grown GaAs1-Sbx On InP And Correlation With Film Microstructure
Author(s): J Klem; J I Chyi; H Morkoc; Y E Ihm; N Otsuka
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Paper Abstract

GaAs 0.5 Sb 0.5 grown on InP by molecular beam epitaxy (MBE) has been characterized by .. transmission electron microscopy and variable temperature Hall measuremts 0 Unintentionally doped layers are p-type with measured hole concentrations of 1-3 x 10 16 cm-3 at 300K. The behavior of the Hall coefficient as a function of temperature is found to be well-described in the temperature range 30K<T<300K by a two-acceptor model. Intentional Si doping of the GaAs ,Sbn layers leads to relatively uncompensated p-type conductivity. Hole mobilities in these njers are generally less than 100 cm /Vs at 300K as a result of compositional fluctuations which result from the metastable nature of these films. In addition, hole mobilities are anisotropic and reflect an unusual asymmetry in the film microstructure which can be observed by transmission electron microscopy.

Paper Details

Date Published: 18 May 1988
PDF: 6 pages
Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); doi: 10.1117/12.943937
Show Author Affiliations
J Klem, Sandia National Laboratories (United States)
J I Chyi, University of Illinois (United States)
H Morkoc, University of Illinois (United States)
Y E Ihm, Purdue University (United States)
N Otsuka, Purdue University (United States)

Published in SPIE Proceedings Vol. 0877:
Micro-Optoelectronic Materials
Carl A. Kukkonen, Editor(s)

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