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Proceedings Paper

Optical Characterization Of GaAs1-xSbx And GaAs1-xSbx/GaAs Strained Layer Superlattices
Author(s): J F Klem; D Huang; H Morkoc; Y E Ihm; N Otsuka
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Paper Abstract

Molecular beam epitaxy has been used to grow both GaAs, ,Sb films lattice-matched to InP and GaAsi_ Sb /GaAs strained layer superlattices oh.6aArgubstrates. Films grown on InP substrates are ofa composition inside the well-known solid-phase miscibility gap for this alloy. Because these films are metastable, they exhibit an unusual microstructure which includes both ordering and clustering effects. Nevertheless, we have obtained low-temperature photoluminescence linewidths of under 8 meV. This represents the best linewidth for this material reported to date. Correlations between film microstructure and the optical quality of these alloys have been observed. Strained layer GaAsi_xSb /GaAs superlattices grown on GaAs substrates have been characterized by x-ray di3i'fraction, photoluminescence, optical absorption, and photoreflectance. Structural parameters as determined by x-ray diffraction have been used in an envelope function superlattice band structure model to estimate the band offsets and indicate that the superlattices are Type II, with a large valence band discontinuity.

Paper Details

Date Published: 18 May 1988
PDF: 7 pages
Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); doi: 10.1117/12.943936
Show Author Affiliations
J F Klem, University of Illinois (United States)
D Huang, University of Illinois (United States)
H Morkoc, University of Illinois (United States)
Y E Ihm, Purdue University (United States)
N Otsuka, Purdue University (United States)

Published in SPIE Proceedings Vol. 0877:
Micro-Optoelectronic Materials
Carl A. Kukkonen, Editor(s)

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