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Proceedings Paper

Metalorganic Chemical Vapor Deposition Of InSb Using Tri-Neopentylindium
Author(s): J C Chen; W K Chen; Pao-Lo Liu; J Maloney; O T Beachley
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Paper Abstract

The metalorganic chemical vapor deposition (MOCVD) of InSb using tri-neopentylindium (InNp3) is reported. The newly synthesized InNp3 has several advantages, e.g., easy to prepare, easy to purify, and non-pyrophoric, over the commonly used tri-ethylindium (TEIn) and tri-methylindium (TMIn). We report the MOCVD growth of InSb using InNp3. The InSb films were examined by double crystal x-ray diffraction, scanning electron microscope (SEM), and x-ray energy dispersive analysis. The results indicate that the deposited InSb films are stoichiometric and single crystal. The crystal quality and surface morphology are comparable to similar films grown from TMIn.

Paper Details

Date Published: 18 May 1988
PDF: 4 pages
Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); doi: 10.1117/12.943934
Show Author Affiliations
J C Chen, State University of New York at Buffalo (United States)
W K Chen, State University of New York at Buffalo (United States)
Pao-Lo Liu, State University of New York at Buffalo (United States)
J Maloney, State University of New York at Buffalo (United States)
O T Beachley, State University of New York at Buffalo (United States)


Published in SPIE Proceedings Vol. 0877:
Micro-Optoelectronic Materials
Carl A. Kukkonen, Editor(s)

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