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Proceedings Paper

Silicon-Compatible Infrared Sensors Based On Epitaxial Silicides
Author(s): R W Fathauer; T L Lin; P J Grunthaner; J Maserjian; P O Andersson; K T Chang; J H Mazur; D N Jamieson
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Paper Abstract

The application of molecular beam epitaxy to the growth of infrared sensor structures employing either metallic or semiconducting silicides is being investigated. Thin, heavily Ga-doped layers have been used to modify the cut-off wavelength of Schottky diodes in CoSi2 on Si(111). The cut-off wavelengths of n-type diodes have been decreased from 2.1 to 1.4 pm, while the cut-off wavelengths of p-type diodes have been increased from 3.5 to 5.0 Rm. In addition, epitaxial growth of CrSi2, a small bandgap semiconductor which might be used as an intrinsic detector, is being explored. Initial results show that CrSi2 forms islands on Si(111) which commonly exhibit two different epitaxial relationships with the substrate. These orientations are related by a 30° rotation about the surface normal.

Paper Details

Date Published: 18 May 1988
PDF: 6 pages
Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); doi: 10.1117/12.943931
Show Author Affiliations
R W Fathauer, Jet Propulsion Laboratory (United States)
T L Lin, Jet Propulsion Laboratory (United States)
P J Grunthaner, Jet Propulsion Laboratory (United States)
J Maserjian, Jet Propulsion Laboraton (United States)
P O Andersson, Jet Propulsion Laboratory (United States)
K T Chang, University of Southern California (United States)
J H Mazur, University of Southern California (United States)
D N Jamieson, California Institite of Technology (United States)

Published in SPIE Proceedings Vol. 0877:
Micro-Optoelectronic Materials
Carl A. Kukkonen, Editor(s)

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