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Proceedings Paper

A High Density Anodized Aluminum Microstrip Structure For High Speed Interconnections
Author(s): W. C. Dillard; J. L. Davidson; R. C. Jaeger
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Paper Abstract

A new interconnect structure formed by the selective anodization of aluminum thin films is examined. Interconnect lines of aluminum embedded in anodic aluminum oxide dielectric were fabricated. Resistivity of the lines was determined to be - 3.1 μΩcm. This value compares well to the bulk value of 2.8 μΩ.cm Crosstalk is expected to be < 10%.

Paper Details

Date Published: 6 April 1988
PDF: 6 pages
Proc. SPIE 0871, Space Structures, Power, and Power Conditioning, (6 April 1988); doi: 10.1117/12.943669
Show Author Affiliations
W. C. Dillard, Auburn University (United States)
J. L. Davidson, Auburn University (United States)
R. C. Jaeger, Auburn University (United States)


Published in SPIE Proceedings Vol. 0871:
Space Structures, Power, and Power Conditioning
Raymond F. Askew, Editor(s)

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