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Proceedings Paper

Fast Risetime Impulse Voltage Generation Facility At The University Of Buffalo
Author(s): A. N. Hammoud; S. Cygan; W. Khechen; B. Krishnakumar; J. Shea
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Paper Abstract

An experimental facility at the new campus of the University of Buffalo, which is capable of generating impulse voltages up to 260 kV at 170 J, is described in this paper. The values of circuit components can he chosen and arranged to provide varying risetimes and pulsewidths of the output transient voltage. Depending on the circuit components, an output voltage pulse with risetime from 50 ns to 35 us and pulsewidth from 40 us to 200 us can be obtained. These parameters, which cover a wide range of voltage surges, allow actual high voltage simulation of insulating materials, used in high voltage energy storage and transport devices, being stressed under impulse voltages in a laboratory environment. This paper describes the circuitry and damping unit, the double isolated screen room, the sealtite tubings and cable connections that were all installed in this new facility to make the impulse generator operational in a noise-free and safe laboratory environment. Other facilities which can perform a variety of material characterization tests are also described.

Paper Details

Date Published: 6 April 1988
PDF: 5 pages
Proc. SPIE 0871, Space Structures, Power, and Power Conditioning, (6 April 1988); doi: 10.1117/12.943661
Show Author Affiliations
A. N. Hammoud, State University of New York at Buffalo (United States)
S. Cygan, State University of New York at Buffalo (United States)
W. Khechen, State University of New York at Buffalo (United States)
B. Krishnakumar, State University of New York at Buffalo (United States)
J. Shea, State University of New York at Buffalo (United States)


Published in SPIE Proceedings Vol. 0871:
Space Structures, Power, and Power Conditioning
Raymond F. Askew, Editor(s)

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