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Proceedings Paper

Semiconductor-Metal Eutectic Composites For High-Power Switching
Author(s): B. M. Ditchek; B. G. Yacobi
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Paper Abstract

A novel electronic material, a Si-TaSi2 semiconductor-metal eutectic composite, offers promise in high-power switching applications. In this paper, the basic electronic properties of the material are briefly described. It is shown that the in situ Schottky junctions inherent to the material can be used to fabricate transistors. The advantages of these devices are their volumetric current transport and their unusual resistance to avalanche breakdown.

Paper Details

Date Published: 6 April 1988
PDF: 5 pages
Proc. SPIE 0871, Space Structures, Power, and Power Conditioning, (6 April 1988); doi: 10.1117/12.943644
Show Author Affiliations
B. M. Ditchek, GTE Laboratories Incorporated (United States)
B. G. Yacobi, GTE Laboratories Incorporated (United States)

Published in SPIE Proceedings Vol. 0871:
Space Structures, Power, and Power Conditioning
Raymond F. Askew, Editor(s)

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