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Proceedings Paper

Characterization Of Direct Readout Si:Sb And Si:Ga Infrared Detector Arrays For Space-Based Astronomy
Author(s): Mark E. McKelvey; Craig R. McCreight; John H. Goebel; Nicolas N. Moss; Maureen L. Savage
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Paper Abstract

Preliminary test results from the evaluation of Si:Sb and Si:Ga 58 x 62 element infrared detector arrays are presented. These devices are being characterized under background conditions and readout rates representative of operation in orbiting cryogenically-cooled infrared observatories. The arrays are hybridized to silicon direct readout multiplexers which allow random-access and non-destructive readout. Array performance optimization is being conducted with a flexible microcomputer-based drive and readout electronics system. Preliminary Si:Sb measurements indicate a sense node capacitance of 0.06 pF, peak (28 μm) responsivity >3 A/W at 2V bias, read noise of 130 rms e-, dark current ~10 e-/s, and a well capacity >105e-. The limited test data available on the performance of the Si:Ga array are also discussed.

Paper Details

Date Published: 13 April 1988
PDF: 8 pages
Proc. SPIE 0868, Optoelectronic Technologies for Remote Sensing from Space, (13 April 1988); doi: 10.1117/12.943602
Show Author Affiliations
Mark E. McKelvey, NASA Ames Research Center (United States)
Craig R. McCreight, NASA Ames Research Center (United States)
John H. Goebel, NASA Ames Research Center (United States)
Nicolas N. Moss, Sterling Software Inc (United States)
Maureen L. Savage, Sterling Software Inc (United States)


Published in SPIE Proceedings Vol. 0868:
Optoelectronic Technologies for Remote Sensing from Space
C. Stuart Bowyer; John S. Seeley, Editor(s)

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