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Proceedings Paper

SiC-UV-Photodetectors
Author(s): P. Glasow; G. Ziegler; W. Suttrop; G. Pensl; R. Helbig
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Paper Abstract

UV-photodiodes were fabricated by N-implantation in p-type 6H-SiC epitaxial layers grown on monocrystalline substrates. I-V characteristics (at 296-826 K) and spectral quantum efficiencies (at 295-673 K) are measured to characterize the photodiodes. Maximum quantum efficiences of 75% are observed at wavelengths around 280 nm. This means, that the diffusion length of the electron must be greater than 1 μm. From an analysis of the long wavelength cut-off, the band-gap energy and the temperature coefficient of the band-gap energy are determined.

Paper Details

Date Published: 13 April 1988
PDF: 8 pages
Proc. SPIE 0868, Optoelectronic Technologies for Remote Sensing from Space, (13 April 1988); doi: 10.1117/12.943598
Show Author Affiliations
P. Glasow, Central Research Laboratories (Germany)
G. Ziegler, Central Research Laboratories (Germany)
W. Suttrop, University of Erlangen (Germany)
G. Pensl, University of Erlangen (Germany)
R. Helbig, University of Erlangen (Germany)


Published in SPIE Proceedings Vol. 0868:
Optoelectronic Technologies for Remote Sensing from Space
C. Stuart Bowyer; John S. Seeley, Editor(s)

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