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Proceedings Paper

The Use Of Cd0.7Hg0.3Te Grown On GaAs For Optical Fibre Communication Devices
Author(s): L M Smith; J Thompson; G T Jenkin; T Nguyen Duy; P Gori
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Paper Abstract

Cd0,7Hg0.3Te has been grown by MOCVD on GaAs in part of an optical fibre communication device study. Auto-doping from the substrate is contained in a suitable buffer layer and a thin HgTe layer has been used as the p-type contact. Preliminary device results are presented and are encouraging for future developments.

Paper Details

Date Published: 1 January 1987
PDF: 6 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943591
Show Author Affiliations
L M Smith, GEC Research Limited (France)
J Thompson, GEC Research Limited (France)
G T Jenkin, GEC Research Limited (France)
T Nguyen Duy, Societe Anonyme de Telecommunications (France)
P Gori, Societe Anonyme de Telecommunications (France)

Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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