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Proceedings Paper

Optimization Of Ion Implantation Technique In Manufacturing HgCdTe Devices For Fiber Optics Communications
Author(s): C Blanchard; J F Barbot; J C Desoyer; D Le Scoul; J L Dessus; A Durand
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Paper Abstract

Hgl-x Cdx Te is a good candidate for signal transmission through fiber optics for it has an adjustable direct band gap (x ~ 0.7 for silica glass and x~ 0.4 for fluorine glass). Photovoltaic detectors can be made by implantation on a p-type substrate. However the physical nature of the junction is not yet clearly understood. We implanted various ions (Al, Xe, Kr) at different energies, (60 3 keV to 320 keV) and temperatures (15 K, 300 K) in p-type bulk Hg 0.3 Cd 0.7 Te (p~ 1.5 x 10 16/cm3). From E.B.I.C. and differential Hall measurements, we conclude that Hg inferstitials should be the most realistic candidates as doping defects.

Paper Details

Date Published: 1 January 1987
PDF: 4 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943590
Show Author Affiliations
C Blanchard, Laboratoire de Metallurgie Physique (France)
J F Barbot, Laboratoire de Metallurgie Physique (France)
J C Desoyer, Laboratoire de Metallurgie Physique (France)
D Le Scoul, S.A.T (France)
J L Dessus, S.A.T (France)
A Durand, S.A.T (France)


Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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