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Proceedings Paper

Slider L.P.E. Of Hgl_xCdxTe From Te-Rich Solutions: A New Method For The Growth Of Any Composition
Author(s): S Bernardi
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Paper Abstract

Due to the new applications of mercury cadmium telluride as a material for optoelectronic devices, it's important to have flexibles epitaxyal methods allowing growth of any composition. Working from Te-solutions in a two zones reactor, we present a method to prepare the growth solutions completely in-situ, controlling the compositional parameters by the zones temperatures.

Paper Details

Date Published: 1 January 1987
PDF: 5 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943589
Show Author Affiliations
S Bernardi, CSELT (Italy)


Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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