Share Email Print

Proceedings Paper

Slider L.P.E. Of Hgl_xCdxTe From Te-Rich Solutions: A New Method For The Growth Of Any Composition
Author(s): S Bernardi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Due to the new applications of mercury cadmium telluride as a material for optoelectronic devices, it's important to have flexibles epitaxyal methods allowing growth of any composition. Working from Te-solutions in a two zones reactor, we present a method to prepare the growth solutions completely in-situ, controlling the compositional parameters by the zones temperatures.

Paper Details

Date Published: 1 January 1987
PDF: 5 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943589
Show Author Affiliations
S Bernardi, CSELT (Italy)

Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

© SPIE. Terms of Use
Back to Top