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Proceedings Paper

Evaluated Performances Of Ga0.96Al0.04Sb Avalanche Photodetectors
Author(s): Henri Luquet; Michele Perotin; Leone Gouskov; David Magalion; Alain Jean; Pierre Silvestre
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Paper Abstract

This paper presents an evaluation of the noise equivalent power (NEP) of 1.55 pm avalanche photodetectors based on Ga0.96 Al0.04 Sb, liquid phase epitaxy (LPE) grown junctions. Deduced from some measured photoelectrical parameters and from others publicated ones an optimum NEP of 3.5 x 10 -12 W/ √Hz is calculated for a doping level of 3 x 10 21 m-3.

Paper Details

Date Published: 1 January 1987
PDF: 7 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943588
Show Author Affiliations
Henri Luquet, C.N.R.S. (France)
Michele Perotin, C.N.R.S (France)
Leone Gouskov, C.N.R.S (France)
David Magalion, C.N.R.S (France)
Alain Jean, C.N.R.S (France)
Pierre Silvestre, C.N.R.S (France)


Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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