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Proceedings Paper

Metal Organic Chemical Vapor Deposition (MOCVD) Growth Of Ga1-XInxAsySb1-y : First Electrical And Optical Characterization Of Materials And Devices
Author(s): Georges Bougnot; Frederique Delannoy; Fabien Pascal; Fabien Roumanille; Alain Foucaran; Philippe Grosse; Josiane Bougnot; Leone Gouskov
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Paper Abstract

Gal-xInxAsySb1-y epitaxial layers were grown by atmospheric pressure metal organic chemical vapor deposition (MOCVD) on (100) GaSb substrates with a wide range of x and y values. Layer morphology evolution versus growth conditions is described. First results on I-V, C-V and spectral response of GaInAsSb/GaSb heterojunctions are promising for 2.5 μm photodetection.

Paper Details

Date Published: 1 January 1987
PDF: 8 pages
Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943586
Show Author Affiliations
Georges Bougnot, Universite des Sciences et Techniques du Languedoc. (France)
Frederique Delannoy, Universite des Sciences et Techniques du Languedoc (France)
Fabien Pascal, Universite des Sciences et Techniques du Languedoc (France)
Fabien Roumanille, Universite des Sciences et Techniques du Languedoc (France)
Alain Foucaran, Universite des Sciences et Techniques du Languedoc (France)
Philippe Grosse, Universite des Sciences et Techniques du Languedoc (France)
Josiane Bougnot, Universite des Sciences et Techniques du Languedoc (France)
Leone Gouskov, Universite des Sciences et Techniques du Languedoc (France)


Published in SPIE Proceedings Vol. 0866:
Materials and Technologies for Optical Communications
Alain P. Brenac, Editor(s)

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